TGF2080 800um discrete gaas phemt datasheet: rev b 06-26-13 - 1 of 6- disclaimer: subject to change without notice ? 2013 triquint www.triquint.com applications ? defense & aerospace ? high-reliability ? test and measurement ? commercial ? broadband wireless product features ? frequency range: dc - 20 ghz ? 29.5 dbm typical output power - p1db ? 11.5 db typical gain @ 12 ghz ? 56% typical pae @ 12 ghz ? no vias ? technology: 0.25 um gaas phemt ? chip dimensions: 0.41 x 0.54 x 0.10 mm ordering information part eccn description TGF2080 ear99 800um gaas phemt functional block diagram general description the triquint TGF2080 is a discrete 800-micron phemt which operates from dc to 20 ghz. the TGF2080 is designed using triquint?s proven standard 0.25um power phemt production process. this process features advanced techniques to optimize microwave power and efficiency at high drain bias operating conditions. the TGF2080 typically provides 29.5 dbm of output power at p1db with gain of 11.5 db and 56% power- added efficiency at 1 db compression. this performance makes the TGF2080 appropriate for high efficiency applications. the protective overcoat laye r with silicon nitride provides a level of environmental robustness and scratch protection. lead-free and rohs compliant. pad configuration pad dimensions terminals g (71um x 71um) gate d (71um x 71um) drain s (121um x 71um) source (outermost) s (121um x 96um) source (center)
TGF2080 800um discrete gaas phemt datasheet: rev b 06-26-13 - 2 of 6- disclaimer: subject to change without notice ? 2013 triquint www.triquint.com electrical characteristics test conditions unless otherwise noted: temperature = 25 c. symbol parameter conditions min typ max units p1db output power at 1db compression freq = 12 ghz, vds = 8 v, ids = 50% idss 29.5 dbm g1db gain at p1db freq = 12 ghz, vds = 8 v, ids = 50% idss 11.5 db pae pae at p1db freq = 12 ghz, vds = 8 v, ids = 50% idss 56 % idss saturated drain current vds = 2 v, vgs = 0 v 160 259 (1) 358 ma gm transconductance vds = 2 v, ids = 50% idss 309 ms vp pinch-off voltage vds = 2 v, ids = 0.80 ma -1.5 -1.0 -0.5 v bvgd gate-drain breakdown voltage ig = 0.80 ma, source open -15 -12 v bvgs gate-source breakdown voltage ig = 0.80 ma, drain open -15 v rth thermal resistance ausn eutectic attach 33 ? c/w ? based on ir scan notes: 1. typical standard deviation of 6.4ma (1 ). absolute maximum ratings symbol parameter absolute continuous units vds drain-source voltage (2) 12 8 v vgs gate- source voltage -7 -3 v id drain current (2) idss idss ma ig,f forward gate current 40 7 ma tch channel temperature (3) 175 (4) 150 (5) c tstg storage temperature -65 to 150 -65 to 150 c pin input continuous wave power (2) 26 @ 3 db compression dbm ptot total power dissipation 4.2 2.8 w notes: 1. these ratings represent the maximum operable values for this device. stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device and/ or affect device lifetime. these are stress ratings only, and functional operation of the device at these conditions is not implied. 2. combinations of supply volt age, supply current, input power, and output power shall not exceed the maximum total power dissipation listed in the table. 3. junction operating temperature will dire ctly affect the device median time to failu re. for maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. 4. when operated at this channel temper ature, the median life is 1.0e+5 hours. 5. when operated at this channel temper ature, the median life is 1.0e+6 hours.
TGF2080 800um discrete gaas phemt datasheet: rev b 06-26-13 - 3 of 6- disclaimer: subject to change without notice ? 2013 triquint www.triquint.com s-parameters test conditions: v ds =+8 v (typ.), i ds =50% i dss, temp=+25 c, 50 system freq (ghz) s11 (mag) s11 (ang) s21 (mag) s21 (ang) s12 (mag) s12 (ang) s22 (mag) s22 (ang) 1 ? 0.94 ? \ 78.8 ? 15.22 ? 133.6 ? 0.033 ? 46.8 ? 0.35 ? \ 59.9 ? 2 ? 0.90 ? \ 125.6 ? 10.45 ? 106.1 ? 0.045 ? 23.1 ? 0.28 ? \ 98.9 ? 3 ? 0.89 ? \ 152.5 ? 7.59 ? 88.3 ? 0.049 ? 8.7 ? 0.25 ? \ 124.7 ? 4 ? 0.89 ? \ 170.9 ? 5.86 ? 74.6 ? 0.050 ? \ 1.5 ? 0.24 ? \ 142.8 ? 5 ? 0.90 ? 175.0 ? 4.72 ? 62.9 ? 0.049 ? \ 9.6 ? 0.25 ? \ 156.1 ? 6 ? 0.90 ? 163.5 ? 3.91 ? 52.4 ? 0.049 ? \ 16.5 ? 0.26 ? \ 167.1 ? 7 ? 0.91 ? 153.5 ? 3.32 ? 42.5 ? 0.048 ? \ 23.0 ? 0.28 ? \ 176.0 ? 8 ? 0.92 ? 144.6 ? 2.86 ? 33.0 ? 0.046 ? \ 29.2 ? 0.30 ? 176.3 ? 9 ? 0.93 ? 136.4 ? 2.49 ? 23.9 ? 0.045 ? \ 36.1 ? 0.33 ? 169.1 ? 10 ? 0.94 ? 128.9 ? 2.17 ? 14.9 ? 0.041 ? \ 42.0 ? 0.36 ? 162.8 ? 11 ? 0.94 ? 122.3 ? 1.92 ? 6.7 ? 0.039 ? \ 45.4 ? 0.38 ? 157.7 ? 12 ? 0.95 ? 116.3 ? 1.70 ? \ 1.4 ? 0.036 ? \ 49.6 ? 0.42 ? 152.6 ? 13 ? 0.95 ? 110.7 ? 1.52 ? \ 9.3 ? 0.034 ? \ 53.2 ? 0.45 ? 147.8 ? 14 ? 0.96 ? 105.2 ? 1.37 ? \ 17.1 ? 0.030 ? \ 56.5 ? 0.49 ? 142.4 ? 15 ? 0.97 ? 100.5 ? 1.23 ? \ 24.4 ? 0.027 ? \ 54.4 ? 0.52 ? 138.3 ? 16 ? 0.98 ? 95.7 ? 1.12 ? \ 31.8 ? 0.026 ? \ 54.7 ? 0.56 ? 133.8 ? 17 ? 0.99 ? 91.4 ? 1.01 ? \ 39.0 ? 0.026 ? \ 55.5 ? 0.59 ? 129.7 ? 18 ? 0.99 ? 87.0 ? 0.91 ? \ 46.4 ? 0.024 ? \ 58.2 ? 0.62 ? 125.0 ? includes 1 bond wire on each gate, 1 bond wire on each drain, and 3 bond wires on each source pad. ?
TGF2080 800um discrete gaas phemt datasheet: rev b 06-26-13 - 4 of 6- disclaimer: subject to change without notice ? 2013 triquint www.triquint.com ? ? rf tuned data at 12 ghz bias conditions: v ds = 8 v, i dq = 50% idss, f = 12 ghz 0% 10% 20% 30% 40% 50% 60% 0 5 10 15 20 25 30 -10-5 0 5 101520 pae (%) gain (db)/ pout (dbm) pin (dbm) gain / pout / pae vs. pin gain pout pae 0% 10% 20% 30% 40% 50% 60% 0 5 10 15 20 25 30 5 1015202530 pae (%) gain (db) pout (dbm) gain / pae vs. pout gain pae
TGF2080 800um discrete gaas phemt datasheet: rev b 06-26-13 - 5 of 6- disclaimer: subject to change without notice ? 2013 triquint www.triquint.com ? ? assembly notes component placement and adhesive attachment assembly notes: ? vacuum ? pencils ? and/or ? vacuum ? collets ? are ? the ? preferred ? method ? of ? pick ? up. ? ? air ? bridges ? must ? be ? avoided ? during ? placement. ? ? the ? force ? impact ? is ? critical ? during ? auto ? placement. ? ? organic ? attachment ? (i.e. ? epoxy) ? can ? be ? used ? in ? low \ power ? applications. ? ? curing ? should ? be ? done ? in ? a ? convection ? oven; ? proper ? exhaust ? is ? a ? safety ? concern. ? ? reflow process assembly notes: ? recommend ? eutectic ? die ? attach ? with ? ausn ? (80/20) ? solder ? and ? limit ? exposure ? to ? temperatures ? above ? 300 ? c ? to ? 30 ? seconds, ? maximum. ? ? an ? alloy ? station ? or ? conveyor ? furnace ? with ? reducing ? atmosphere ? should ? be ? used. ? ? do ? not ? use ? any ? kind ? of ? flux. ? ? coefficient ? of ? thermal ? expansion ? matching ? is ? critical ? for ? long \ term ? reliability. ? ? devices ? must ? be ? stored ? in ? a ? dry ? nitrogen ? atmosphere. ? ? interconnect process assembly notes: ? either ? thermo \ compression ? wedge ? bonding ? or ? thermosonic ? ball ? bonding ? can ? be ? used ? to ? bond ? onto ? the ? die. ? ? force, ? time, ? and ? ultrasonics ? are ? critical ? bonding ? parameters. ? ? aluminum ? wire ? should ? not ? be ? used. ? ? devices ? with ? small ? pad ? sizes ? should ? be ? bonded ? with ? 0.0008 \ inch ? wire. ? product compliance information esd sensitivity caution ? esd sensitive device ?? proper esd procedures should be followed when handling this device. ? ? rohs compliance this part is compliant with eu 2002/95/ec rohs directive (restrictions on the use of certain hazardous substances in electrical and electronic equipment). this product also has the following attributes: ? lead free ? halogen free (chlorine, bromine) ? antimony free ? tbbp-a (c 15 h 12 br 4 0 2 ) free ? pfos free ? svhc free not hast compliant.
TGF2080 800um discrete gaas phemt datasheet: rev b 06-26-13 - 6 of 6- disclaimer: subject to change without notice ? 2013 triquint www.triquint.com ? disclaimer gaas devices are susceptible to damage from electrosta tic discharge. proper precautions should be observed during handling, assembly and test. contact information for the latest specifications, additional product information, worldwide sales and distribution locations, and information about triquint: web: www.triquint.com tel: +1.503.615.9000 email: info-sales@triquint.com fax: +1.503.615.8902 for technical questions and application information: email: sjcapplications.engineering@triquint.com important notice the information contained herein is believed to be reliable. triquint makes no warranties regarding the information contained herein. triquint assumes no responsibility or li ability whatsoever for any of the information contained herein. triquint assume s no responsibility or liability whatsoever for the use of the information contained herein. the information contained herein is provided "as is, where is " and with all faults, and the entire risk associated with such information is entirely with the user. all inform ation contained herein is subjec t to change without notice. customers should obtain and verify the latest relevant info rmation before placing orders fo r triquint products. the information contained herein or any use of such information does not grant, exp licitly or implicitly, to any party any patent rights, licenses, or any other inte llectual property rights, whether with r egard to such information itself o r anything described by such information. triquint products are not warranted or authorized for use as critical components in medical, life-saving, or life- sustaining applications, or other applications where a fa ilure would reasonably be expected to cause severe personal injury or death.
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